PART |
Description |
Maker |
HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144 Specialty DRAMs - 256M (8Mx32) 200MHz Specialty DRAMs - 256M (16Mx16) 200MHz Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
HYB39D128323C-4.5 HYB25D128323C-3.0 HYB25D128323C- |
Specialty DRAMs - 333MHz (4Mx 32) Specialty DRAMs - 300MHz (4M x 32) Specialty DRAMs - 275MHz (4M x 32) Low power Specialty DRAMs - 222MHz (4M x 32) Low power
|
Infineon
|
HY5DU561622FTP-4 HY5DU561622FTP-5 HY5DU561622FLTP- |
256M(16Mx16) DDR SDRAM
|
Hynix Semiconductor
|
HYB25L512160AC-7.5 HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3 Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp.
|
Infineon
|
M366S1654CTS-C7A M366S1654CTS-L1L M366S1654CTS-C7C |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在16Mx16显示BanksK的刷新,3.3V的同步DRAM的社民党
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
K4X56163PI-FE K4X56163PI-FG |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
IS43R16160D-6TL IS43R16160D-6TLI IS46R16160D-6TLA1 |
8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM
|
Integrated Silicon Solution, Inc
|
CAT25C081PI-17 CAT25C321PI-17 CAT25C041PI-17 CAT25 |
SPECIALTY MICROPROCESSOR CIRCUIT, PDIP8 PLASTIC, DIP-8 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO14 SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8
|
SunLED Co., Ltd.
|